A W-Band Amplifier With a New Wide-Band Interstage Matching Technique Using Self-Resonance of a Microstrip-Coupled Line
نویسندگان
چکیده
A new interstage matching technique is presented for design of a wide-band multi-stage amplifier using commercial 60- n m GaN-on-silicon technology in the W-band. The proposed network designed as two-pole conjugated impedance approach wideband characteristics low-characteristic transmission lines and an optimized microstrip-coupled line. In particular, line provides strong resonance at desired frequency, enabling optimal conjugate both edge intermediate frequencies simultaneously. implemented W-band three-stage exhibited small-signal gain above 14.1 dB from 75 to 103 GHz. Also, output power between 92-100 GHz was greater than 25 dBm, maximum 96 25.8 dBm. with area 2 mm × 1.2 mm.
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ژورنال
عنوان ژورنال: IEEE Access
سال: 2022
ISSN: ['2169-3536']
DOI: https://doi.org/10.1109/access.2022.3203190